黑砷磷/晶體黑磷-砷合金 BP-As alloy （Black Phosphorus-Arsenic Alloy）晶體尺寸：~mm電學性能：半導體晶體結(jié)構(gòu)：斜方晶系晶胞參數(shù)：晶胞參數(shù)取決于合金中的成分。p/As比值為1a = b = 0.338 nm, b = 10.743 nm, c = 0.446 nm, α = β = γ = 90#176;晶體類型：合成晶體純度：gt;99.995%

黑砷磷/晶體黑磷-砷合金 BP-As alloy (Black Phosphorus-Arsenic Alloy)
晶體尺寸：~mm
電學性能：半導體
晶體結(jié)構(gòu)：斜方晶系
晶胞參數(shù)：晶胞參數(shù)取決于合金中的成分管理。p/As比值為1
a = b = 0.338 nm, b = 10.743 nm, c = 0.446 nm, α = β = γ = 90°
晶體類型：合成
晶體純度：>99.995%

Powder X-ray diffraction (XRD) of a single crystal P-As. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.

Stoichiometric analysis of a single crystal P-As by Energy-dispersive X-ray spectroscopy (EDX).

Raman spectrum of a single crystal P-As. Measurement was performed with a 785 nm Raman system at room temperature.