參考價(jià)	面議

參考價(jià)

面議

具體成交價(jià)以合同協(xié)議為準(zhǔn)

公司名稱 上海巨納科技有限公司
品牌
型號(hào)
所在地
廠商性質(zhì) 經(jīng)銷商
更新時(shí)間 2020/12/27 1:19:49
訪問次數(shù) 487

在線詢價(jià) 收藏產(chǎn)品進(jìn)入展商展臺(tái)

聯(lián)系方式：袁經(jīng)理 13761090949 查看聯(lián)系方式

聯(lián)系我們時(shí)請(qǐng)說明是儀器網(wǎng)上看到的信息取得了一定進展，謝謝!

索取相關(guān)資料

促銷詳情

促銷時(shí)間：

特價(jià)說明：

促銷詳細(xì)：

2020年01月08日至 2020年02月08日

特價(jià)促銷

模內(nèi)澆口分離自動(dòng)化，降低對(duì)人的依賴度助力各行；傳統(tǒng)的塑膠模具開模后產(chǎn)品與澆口相連前來體驗，需二道工序進(jìn)行人工剪切分離，模內(nèi)熱切模具將澆口分離提前至開模前確定性，消除后續(xù)工序更加廣闊，有利于生產(chǎn)自動(dòng)化，降低對(duì)人的依賴講故事。

產(chǎn)品簡介

我也要發(fā)布產(chǎn)品信息

This product contains full area coverage ReSe2 monolayers on c-cut sapphire substrates.

詳細(xì)信息在線詢價(jià)

This product contains full area coverage ReSe2 monolayers on c-cut sapphire substrates. Sample size measures 1cm in size and the entire sample surface contains monolayer thick ReSe2 sheet. Synthesized full area coverage monolayer ReSe2 is highly crystalline, some regions also display significant crystalline anisotropy.

Sample Properties.

Sample size	1cm x 1cm square shaped
Substrate type	Sapphire c-cut (0001)
Coverage	Full monolayer coverage
Electrical properties	1.45 eV Anisotropic Semiconductor (Indirect Bandgap)
Crystal structure	Distorted Tetragonal Phase (1T’)
Unit cell parameters	a = 0.656 nm, b = 0.672 nm, c = 0.674 nm, α = 91.74°, β = 105°, γ = 119°
Production method	Atmospheric Pressure Chemical Vapor Deposition (APCVD)
Characterization methods	Raman, angle resolved Raman spectroscopy, photoluminescence, absorption spectroscopy TEM, EDS

Specifications

ReSe2 monolayers do not contain intentional dopants or defects. However, our technical staff can produce defected ReSe2 using α-bombardment technique.

Supporting datasets [for * Full area ReSe2 monolayers on c-cut Sapphire]

Transmission electron images (TEM) and angle resolved Raman spectroscopy measurements acquired from CVD grown full area coverage ReSe2 monolayers on c-cut sapphire confirming crystalline anisotropy

Energy dispersive X-ray spectroscopy (EDX) characterization on CVD grown full area coverage monolayer ReSe2 on c-cut sapphire

Raman spectroscopy measurement confirm monolayer nature of the CVD grown samples. Differential reflectance measurements clearly show bａnd gap at 1.45 eV for monolayer ReS2 consistent with the existing literature values. PL spectrum does not show any PL signal due to indirect bａnd nature.