晶體尺寸：10毫米電學性能：金屬充分發揮，電荷密度波（CDW）（TCDW ~ 170K）晶體結構：單斜晶晶胞參數(shù)：a = 1.479nm發展成就，B = 0.364nm，C = 0.934nm重要方式，α=γ= 90#176;開展面對面，β= 110.71晶體類型：合成晶體純度：＞99.995%表征方法：XRD、拉曼模式、EDX

晶體尺寸：10毫米
電學性能：金屬自動化，電荷密度波（CDW）（TCDW ~ 170K）
晶體結構：單斜晶
晶胞參數(shù)：a = 1.479nm，B = 0.364nm發揮重要帶動作用，C = 0.934nm意向，α=γ= 90°，β= 110.71
晶體類型：合成
晶體純度：＞99.995%
表征方法：XRD文化價值、拉曼形式、EDX
 

X-ray diffraction on a TaTe2 single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker.

Powder X-ray diffraction (XRD) of a single crystal TaTe2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.

Stoichiometric analysis of a single crystal TaTe2 by Energy-dispersive X-ray spectroscopy (EDX).

Raman spectrum of a single crystal TaTe2. Measurement was performed with a 785 nm Raman system at room temperature.