二硒化鈮晶體 2H-NbSe2（Niobium Selenide）晶體尺寸：~10毫米電學(xué)性能：金屬共同，半導(dǎo)體（TC ~ 7.2k） Charge Density Waves （CDW） system, Tcdw ~33K晶體結(jié)構(gòu)：六邊形晶胞參數(shù)：a = b = 0.344 nm, c = 1.255 nm, α = β = 90#176;, γ = 120#176;晶體

二硒化鈮晶體 2H-NbSe2(Niobium Selenide)
晶體尺寸：~10毫米
電學(xué)性能：金屬推進一步，半導(dǎo)體（TC ~ 7.2k）
                 Charge Density Waves (CDW) system, Tcdw ~33K
晶體結(jié)構(gòu)：六邊形
晶胞參數(shù)：a = b = 0.344 nm, c = 1.255 nm, α = β = 90°, γ = 120°
晶體類型：合成
晶體純度：＞99.995%

X-ray diffraction on a 2H phase NbSe2 single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 4 XRD peaks correspond, from left to right, to (00l) with l = 2, 4, 6, 8

Powder X-ray diffraction (XRD) of a single crystal 2H NbSe2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.

Stoichiometric analysis of a single crystal 2H NbSe2 by Energy-dispersive X-ray spectroscopy (EDX).

Raman spectrum of a single crystal 2H NbSe2. Measurement was performed with a 785 nm Raman system at room temperature.