二硒化鎢晶體 WSe2（Tungsten Diselenide）-P型晶體尺寸：~10毫米電學(xué)性能：半導(dǎo)體建設應用，P型晶體結(jié)構(gòu)：六邊形晶胞參數(shù)：a = b = 0.328 nm, c = 1.298 nm, α = β = 90#176;, γ = 120#176;晶體類型：合成晶體純度：＞99.995%

二硒化鎢晶體 WSe2(Tungsten Diselenide)-P型
晶體尺寸：~10毫米
電學(xué)性能：半導(dǎo)體支撐作用，P型
晶體結(jié)構(gòu)：六邊形
晶胞參數(shù)：a = b = 0.328 nm, c = 1.298 nm, α = β = 90°, γ = 120°
晶體類型：合成
晶體純度：＞99.995%

X-ray diffraction on a WSe2 single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 5 XRD peaks correspond, from left to right, to (00l) with l = 2, 4, 6, 8, 10

Powder X-ray diffraction (XRD) of a single crystal WSe2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.

Stoichiometric analysis of a single crystal WSe2 by Energy-dispersive X-ray spectroscopy (EDX).

Raman spectrum of a single crystal WSe2. Measurement was performed with a 785 nm Raman system at room temperature.